Semiconductor waveguide inversion in disordered narrow band-gap materials
Identifieur interne : 00C215 ( Main/Repository ); précédent : 00C214; suivant : 00C216Semiconductor waveguide inversion in disordered narrow band-gap materials
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Abstract
It has been previously demonstrated that it is possible to form the NOT gate in a coupled semiconductor waveguide structure in III-V materials. However, to this point, investigations have assumed the materials to be perfect. In this article, we present results of a semiconductor waveguide inverter in GaAs and InAs with disordered material effects included in the simulation. The behavior of the device clearly shows that with the inclusion of mild to moderate disorder in these materials, waveguide NOT gate function is still possible. Nevertheless, under heavy disorder in the system, clear switching becomes impossible. © 2003 American Vacuum Society.
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Akis</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Electrical Engineering and Center for Solid State Electronics Research, Arizona State University, Tempe, Arizona 85287-5706</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Arizona</region></placeName><wicri:cityArea>Department of Electrical Engineering and Center for Solid State Electronics Research, Arizona State University, Tempe</wicri:cityArea></affiliation></author><author><name sortKey="Ferry, D K" uniqKey="Ferry D">D. K. 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B. Microelectronics and nanometer structures. Processing, measurement and phenomena</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Computerized simulation</term><term>Electron waveguides</term><term>Gallium arsenides</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Narrow band gap semiconductors</term><term>Quantum gates</term><term>Semiconductor heterojunctions</term><term>Semiconductor switches</term><term>Theoretical study</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>8535D</term><term>7323</term><term>0367L</term><term>Etude théorique</term><term>Simulation ordinateur</term><term>Porte quantique</term><term>Guide onde électron</term><term>Gallium arséniure</term><term>Indium composé</term><term>Semiconducteur III-V</term><term>Semiconducteur bande interdite étroite</term><term>Hétérojonction semiconducteur</term><term>Commutateur semiconducteur</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">It has been previously demonstrated that it is possible to form the NOT gate in a coupled semiconductor waveguide structure in III-V materials. 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